PART |
Description |
Maker |
IRKLF102-08HJ IRKLF112-08HN IRKLF102-06HK IRKLF102 |
164.85 A, 800 V, SCR Silicon Controlled Rectifier, 250 A, 800 V, SCR, POWER, INT-A-PAK-5 Silicon Controlled Rectifier, 164.85 A, 600 V, SCR Silicon Controlled Rectifier, 164.85 A, 1200 V, SCR
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Vishay Semiconductors
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2N682 2N681 2N691 |
25A silicon controlled rectifier. Vrsom 75V. 25A silicon controlled rectifier. Vrsom 35V. 25A silicon controlled rectifier. Vrsom 840V.
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General Electric Solid State
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IRKL41-06 IRKL41-08 IRKL41-14 |
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 800 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
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Vishay Semiconductors
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X0405BE X0403ME |
SILICON CONTROLLED RECTIFIER,200V V(DRM),4A I(T),TO-202 SILICON CONTROLLED RECTIFIER,600V V(DRM),2.4A I(T),TO-202 From old datasheet system
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ST Microelectronics
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ST280CH06C0 ST280CH04C1 |
Silicon Controlled Rectifier, 1130 A, 400 V, SCR, TO-200AB, EPUK-2 Silicon Controlled Rectifier, 1130 A, 600 V, SCR, TO-200AB, EPUK-2 600V 500A Phase Control SCR in a TO-200AA (A-Puk) package
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Vishay Semiconductors International Rectifier
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2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92 Silicon Controlled Rectifier .8A 25V Thyristor .8A 200V Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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ONSEMI[ON Semiconductor]
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SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE 1160 A, 3400 V, SILICON, RECTIFIER DIODE 1010 A, 3600 V, SILICON, RECTIFIER DIODE 1106 A, 3800 V, SILICON, RECTIFIER DIODE 2640 A, 3800 V, SILICON, RECTIFIER DIODE 1106 A, 3400 V, SILICON, RECTIFIER DIODE 435 A, 1500 V, SILICON, RECTIFIER DIODE 440 A, 600 V, SILICON, RECTIFIER DIODE 1160 A, 3800 V, SILICON, RECTIFIER DIODE 1160 A, 4200 V, SILICON, RECTIFIER DIODE 940 A, 800 V, SILICON, RECTIFIER DIODE 940 A, 1800 V, SILICON, RECTIFIER DIODE 940 A, 400 V, SILICON, RECTIFIER DIODE 940 A, 1000 V, SILICON, RECTIFIER DIODE 940 A, 600 V, SILICON, RECTIFIER DIODE 940 A, 1600 V, SILICON, RECTIFIER DIODE 1106 A, 4000 V, SILICON, RECTIFIER DIODE 310 A, 2600 V, SILICON, RECTIFIER DIODE 370 A, 2600 V, SILICON, RECTIFIER DIODE 2700 A, 2600 V, SILICON, RECTIFIER DIODE 860 A, 1400 V, SILICON, RECTIFIER DIODE 440 A, 400 V, SILICON, RECTIFIER DIODE 440 A, 800 V, SILICON, RECTIFIER DIODE 435 A, 1600 V, SILICON, RECTIFIER DIODE 435 A, 1800 V, SILICON, RECTIFIER DIODE 527 A, 3200 V, SILICON, RECTIFIER DIODE
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WESTCODE SEMICONDUCTORS LTD
|
MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
BYV27-600 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV2 |
Ultra fast low-loss controlled avalanche rectifiers 1.25 A, 300 V, SILICON, RECTIFIER DIODE 1/2" NPT Bracket; Style: Bracket; Applicable Model: LU7 / LHE-A 1.3 A, 100 V, SILICON, RECTIFIER DIODE From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MCR649AP-9 MCR649AP-3 MCR649AP-4 MCR649AP-8 MCR649 |
SILICON CONTROLLED RECTIFIER
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Digitron Semiconductors
|
08003GOD 08003GOB |
Silicon Controlled Rectifier
|
Microsemi
|
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